View INA-01100_490172.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data
INA-01100
Features
* Cascadable 50 Gain Block * Low Noise Figure: 1.7 dB Typical at 100 MHz * High Gain: 32.5 dB Typical at 100 MHz * 3 dB Bandwidth: DC to 500 MHz * Unconditionally Stable (k>1)
The INA series of MMICs is fabricated using HP's 10 GHz fT, 25 GHz fMAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. The recommended assembly procedure is gold-eutectic die attach at 400C and either wedge or ball bonding using 0.7 mil gold wire.[1]
Chip Outline[1]
RF OUT GND 2
Description
The INA-01100 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier chip. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification.
GND 1 RF IN
Note: 1. See Application Note, "A005: Transistor Chip Use" for additional information.
Typical Biasing Configuration
VCC RFC (Optional) Rbias Cblock RF IN 1 2 4 3 Vd = 5.5 V (Nominal) Cblock RF OUT
5965-9561E
6-84
INA-01100 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 50 mA 400 mW +13 dBm 200C -65 to 200C Thermal Resistance: jc = 60C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25C. 3. Derate at 16.7 mW/C for TMS > 176C.
INA-01100 Electrical Specifications[1,3], TA = 25C
Symbol
GP GP f3 dB ISO VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions[2]: Id = 35 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Reverse Isolation (|S12| 2) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 10 to 250 MHz f = 10 to 250 MHz f = 10 to 250 MHz f = 100 MHz f = 100 MHz f = 100 MHz f = 100 MHz f = 100 MHz f = 10 to 250 MHz
Units
dB dB MHz dB
Min.
Typ.
32.5 0.5 500 39 1.6:1 1.5:1
Max.
dB dBm dBm psec V mV/C 4.0
1.7 11 23 200 5.5 +10 7.0
Notes: 1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer. 3. The values are the achievable performance for the INA-01100 mounted in a 70 mil stripline package.
INA-01100 Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, VCC = 35 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.01 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.80 1.00 1.5 2.0 2.5 3.0
0.09 0.10 0.11 0.14 0.18 0.20 0.22 0.24 0.27 0.30 0.44 0.44 0.46 0.48
-16 -27 -5 -80 -98 -110 -115 -120 -124 -127 165 154 148 139
32.7 32.7 32.4 31.6 30.5 29.4 28.4 27.4 25.7 24.3 21.8 17.9 14.6 11.4
43.4 -1 43.1 -10 41.9 -20 38.0 -37 33.7 -52 29.6 -65 26.2 -75 23.4 -84 19.3 -100 16.3 -115 12.37 -179 7.88 146 5.36 121 3.71 96
-38.5 -38.6 -38.4 -38.6 -38.8 -39.6 -38.6 -39.1 -38.3 -36.1 -33.6 -33.0 -30.6 -30.0
.012 .012 .012 .012 .011 .011 .012 .011 .012 .016 .020 .022 .029 .032
-1 15 -8 4 -10 2 -12 -7 -6 -5 42 42 36 45
.18 .19 .20 .24 .27 .30 .32 .34 .36 .36 .19 .13 .12 .10
1 5 10 14 15 10 6 1 -11 -22 -69 -106 -151 159
1.17 1.18 1.17 1.22 1.31 1.51 1.48 1.67 1.76 1.58 1.75 2.42 2.63 3.31
Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section of the Communications Components Designer's Catalog.
6-85
INA-01100 Typical Performance, TA = 25C
(unless otherwise noted: The values are the achievable performance for the INA-01100 mounted in a 70 mil stripline package.)
35 3.0 50 TMS = +125C TMS = +25C TMS = -55C
Id (mA)
35 0.1 GHz 0.5 GHz 30 1.0 GHz 25
Gain Flat to DC 30 2.5
Id (mA)
40
30
Gp (dB)
25
2.0
NF (dB)
20 20 10
20
1.5
15 .01
.02
.05
0.1
0.2
0.5
1.0 1.0
0 0 2 4 Vd (V) 6 8
15 .01
.05 Id (mA)
0.2
1.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure vs. Frequency, TA = 25C, Id = 35 mA
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
33
Gp (mA)
15 Gp Id = 40 mA 12
3.0
32 31
2.5
NF (dB)
P1 dB
P1 dB (dBm)
P1 dB (dBm)
30
13 11
Id = 35 mA 9 Id = 30 mA 6 1.5 3 2.0 Id = 30 to 40 mA
2.5
NF (dB)
9 7 NF
2.0 1.5 1.0 0.5 -55 -25 +25 +85
+125
0 .02
.05
0.1
0.2
0.5
1.0
1.0 .02
.05
0.1
0.2
0.5
1.0
TEMPERATURE (C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power and 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature. f = 0.1 GHz, Id = 35 mA.
Figure 5. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
INA-01100 Chip Dimensions
RF OUT GND 2
(3) (4)
500 13 m 19.7 0.5 mil (2)
(1)
RF IN
GND 1
375 13 m 14.8 0.5 mil
Chip thickness is 140 m/5.5 mil. Bond Pads are 41 m/1.6 mil typical on each side. Note: Ground Bonding is Critical. Refer to Application Bulletin, "AB-0007: INA Bonding Configuration".
6-86

▲Up To Search▲

Price & Availability of INA-01100

	To Download INA-01100 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .